? 2011, scillc. all rights reserved. jan-2011, rev. 0 www.onsemi.com publication order number: CPH3453/d on semiconductor data sheet ordering number : ena1701 features ? low on-resistance. ? 2.5v drive. ? halogen free compliance. speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 250 v gate-to-source voltage v gss 10 v drain current (dc) i d 300 ma drain current (pulse) i dp pw 10 s, duty cycle 1% 1.2 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 1.0 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 250 v zero-gate voltage drain current i dss v ds =250v, v gs =0v 100 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.4 1.3 v forward transfer admittance | yfs | v ds =10v, i d =150ma 0.6 1 s static drain-to-source on-state resistance r ds (on)1 i d =150ma, v gs =4.5v 8.5 11 r ds (on)2 i d =75ma, v gs =2.5v 8.5 11 marking : lk continued on next page. CPH3453 n-channel silicon mosfet general-purpose switching device applications
CPH3453 rev. 0 | page 2 of 4 | www.onsemi.com continued from preceding page. parameter symbol conditions ratings unit min typ max input capacitance ciss v ds =20v, f=1mhz 130 pf output capacitance coss v ds =20v, f=1mhz 9.6 pf reverse transfer capacitance crss v ds =20v, f=1mhz 5.1 pf turn-on delay time t d (on) see speci ed test circuit. 6.3 ns rise time t r see speci ed test circuit. 6.0 ns turn-off delay time t d (off) see speci ed test circuit. 21 ns fall time t f see speci ed test circuit. 42 ns total gate charge qg v ds =125v, v gs =4.5v, i d =300ma 2.2 nc gate-to-source charge qgs v ds =125v, v gs =4.5v, i d =300ma 0.3 nc gate-to-drain ?miller? charge qgd v ds =125v, v gs =4.5v, i d =300ma 0.8 nc diode forward voltage v sd i s =300ma, v gs =0v 0.8 1.2 v package dimensions switching time test circuit unit : mm (typ) 7015a-004 1 : gate 2 : source 3 : drain sanyo : cph3 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 2 1 3 0.95 pw=10 s d.c. 1% 4.5v 0v v in p. g 50 g s i d =150ma r l =666 v dd =100v v out v in d CPH3453 0 150 100 50 250 200 300 0 0.15 0.10 0.05 0.30 0.25 0.20 0.40 0.35 0.45 0.50 0 it14469 it14470 14 26 5 38 7 9 1.0 0 0.5 1.0 1.5 2.0 v ds =10v - -25 c ta=75 c v gs =1.0v 1.5v 25 c 2.5v 1.8v 8 .0v 4.5v i d -- v gs drain current, i d -- a gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- ma
CPH3453 rev. 0 | page 3 of 4 | www.onsemi.com i s -- v sd source current, i s -- a diode forward voltage, v sd -- v drain current, i d -- a | y fs | -- i d forward transfer admittance, | y fs | -- s sw time -- i d switching time, sw time -- ns drain current, i d -- a total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v ciss, coss, crss -- v ds drain-to-source voltage, v ds -- v ciss, coss, crss -- pf 0 0.4 0.2 0.6 1.2 1.0 0.8 0.001 0.01 7 5 3 2 2 0.1 7 5 3 2 it14473 it14474 ta= --25 c 75 c 25 c v ds =10v --25 c 25 c ta=75 c v gs =0v 10 100 7 5 3 7 5 3 2 0.1 23 57 it14475 v dd =100v v gs =4.5v t d (off) t r t f 10 t d (on) 0.01 2 2 0.1 7 7 5 3 2 5 3 1.0 7 5 3 0.01 2 0.001 57 23 0.1 2 57 3 050 15 25 35 45 510203040 it14476 10 3 7 5 3 2 100 3 7 5 2 2 crss coss ciss 0 2.2 1.8 2.0 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.5 4.0 it14477 v ds =125v i d =0.3a 57 3 1.0 7 5 3 f=1mhz gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- ambient temperature, ta -- c r ds (on) -- ta r ds (on) -- v gs static drain-to-source on-state resistance, r ds (on) -- --60 --40 --20 0 20 40 60 80 100 120 140 160 0 2 6 4 14 12 20 16 18 10 8 v gs =4.5v, i d =150ma v gs =2.5v, i d =75ma it14471 ta=25 c it14472 i d =75ma 06 4 2810 0 4 2 8 6 16 18 12 10 14 20 150ma a s o drain-to-source voltage, v ds -- v drain current, i d -- a operation in this area is limited by r ds (on). dc operation 10 s 1ms 10ms 100ms it15493 2 3 5 7 2 2 3 5 7 2 3 5 7 0.01 0.1 3 1.0 0.001 1.0 257 23 3 2 57 3 10 100 5 i d =0.3a i dp =1.2a (pw 10 s) 100 s ta=25 c single pulse when mounted on ceramic substrate (900mm 2 0.8mm)
CPH3453 CPH3453/d literature fulfillment: literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303-675-2175 or 800-344-3860 toll free usa/canada fax: 303-675-2176 or 800-344-3867 toll free usa/canada email : orderlit@onsemi.com n. american technical support : 800-282-9855 toll free usa/canada. europe, middle east and africa technical support : phone: 421 33 790 2910 japan customer focus center phone: 81-3-5773-3850 on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative publication ordering information on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc reserve s the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any partic ular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and speci cally disclaims any and all liability, including without limitation special, consequential or incidental damages. scillc striv es to supply high-quality high-reliability products and recommends adopting safety measures when designing equipment to avoid accidents or m alfunctions. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. ?typical? parameter s which may be provided in scillc data sheets and/or speci cations can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typic als,? must be validated for each customer application by customer?s technical experts. scillc shall not be held liable for any claim or suits with regard to a third party?s intellectual property rights which has resulted from the use of the technical information and products mentioned above. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any o ther application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or u nauthorized application, buyer shall indemnify and hold scillc and its of cers, employees, subsidiaries, af liates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out o f, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/af rmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w it15495 0 0 20 40 0.4 0.6 60 80 100 120 140 160 1.0 0.2 0.8 1.2 when mounted on ceramic substrate (900mm 2 0.8mm)
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